Multiphonon-assisted tunneling through deep levels: A rapid energy-relaxation mechanism in nonideal quantum-dot heterostructures
Identifieur interne : 01BA11 ( Main/Repository ); précédent : 01BA10; suivant : 01BA12Multiphonon-assisted tunneling through deep levels: A rapid energy-relaxation mechanism in nonideal quantum-dot heterostructures
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Abstract
The presence of a deep-level trap coupled to a quantum-dot heterostructure is shown to provide a rapid energy-relaxation pathway through which electrons may thermalize. A capture process is considered whereby a free conduction-band electron is captured into the ground conduction-band state of a quantum dot by multiphonon-assisted tunneling through the trap. As an example calculation, transition rates for a 5 nm radius In0.5Ga0.5As/GaAs quantum dot coupled to the defect M1 are calculated as a function of separation between the quantum dot and the deep level. For separations less than * roughly-equal *10 nm these rates are found to be in excess of 1010 s-1 at 4.2 K. The result suggests that the presence of point defects may serve to enhance the luminescence efficiency of quantum-dot material. The physical situation described in this paper could only arise if the spatial distribution of defects were strongly correlated with that of the quantum-dot structures, e.g., through formation of interface states or point defects as a consequence of the growth process. With this caveat, the proposed mechanism may possibly explain the failure to observe a significant phonon bottleneck effect in recent work on In1-xGaxAs quantum-dot structures [e.g., Appl. Phys. Lett. 64, 2815 (1994)].
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Multiphonon-assisted tunneling through deep levels: A rapid energy-relaxation mechanism in nonideal quantum-dot heterostructures</title><author><name sortKey="Sercel, Peter C" uniqKey="Sercel P">Peter C. Sercel</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Materials Science Institute, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Physics and Materials Science Institute, University of Oregon, Eugene</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">95-0391794</idno><date when="1995-05-15">1995-05-15</date><idno type="stanalyst">PASCAL 95-0391794 AIP</idno><idno type="RBID">Pascal:95-0391794</idno><idno type="wicri:Area/Main/Corpus">01C518</idno><idno type="wicri:Area/Main/Repository">01BA11</idno></publicationStmt><seriesStmt><idno type="ISSN">0163-1829</idno><title level="j" type="abbreviated">Phys. Rev. B</title><title level="j" type="main">Physical Review B (Condensed Matter)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electronic structure</term><term>Gallium arsenides</term><term>Heterostructures</term><term>Indium arsenides</term><term>Interface states</term><term>Luminescence</term><term>Multi-phonon processes</term><term>Point defects</term><term>Quantum dots</term><term>Relaxation time</term><term>Temperature dependence</term><term>Temperature range 0000-0013 K</term><term>Theoretical study</term><term>Umklapp processes</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude théorique</term><term>7150</term><term>7155</term><term>7320D</term><term>Point quantique</term><term>Hétérostructure</term><term>Gallium arséniure</term><term>Indium arséniure</term><term>Dépendance température</term><term>Domaine température 0000-0013 K</term><term>Etat interface</term><term>Défaut ponctuel</term><term>Structure électronique</term><term>Processus n phonons</term><term>Processus Umklapp</term><term>Temps relaxation</term><term>Luminescence</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The presence of a deep-level trap coupled to a quantum-dot heterostructure is shown to provide a rapid energy-relaxation pathway through which electrons may thermalize. A capture process is considered whereby a free conduction-band electron is captured into the ground conduction-band state of a quantum dot by multiphonon-assisted tunneling through the trap. As an example calculation, transition rates for a 5 nm radius In<sub>0.5</sub>Ga<sub>0.5</sub>As/GaAs quantum dot coupled to the defect M1 are calculated as a function of separation between the quantum dot and the deep level. For separations less than * roughly-equal *10 nm these rates are found to be in excess of 10<sup>10</sup> s<sup>-1</sup> at 4.2 K. The result suggests that the presence of point defects may serve to enhance the luminescence efficiency of quantum-dot material. The physical situation described in this paper could only arise if the spatial distribution of defects were strongly correlated with that of the quantum-dot structures, e.g., through formation of interface states or point defects as a consequence of the growth process. With this caveat, the proposed mechanism may possibly explain the failure to observe a significant phonon bottleneck effect in recent work on In<sub>1-x</sub>Ga<sub>x</sub>As quantum-dot structures [e.g., Appl. Phys. Lett. 64, 2815 (1994)].</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0163-1829</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. Rev. B</s0></fA03><fA05><s2>51</s2></fA05><fA06><s2>20</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Multiphonon-assisted tunneling through deep levels: A rapid energy-relaxation mechanism in nonideal quantum-dot heterostructures</s1></fA08><fA11 i1="01" i2="1"><s1>SERCEL (Peter C.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Materials Science Institute, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ></fA14><fA20><s1>14532-14541</s1></fA20><fA21><s1>1995-05-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144B</s2></fA43><fA44><s0>8100</s0><s1>© AIP</s1></fA44><fA47 i1="01" i2="1"><s0>95-0391794</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical Review B (Condensed Matter)</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The presence of a deep-level trap coupled to a quantum-dot heterostructure is shown to provide a rapid energy-relaxation pathway through which electrons may thermalize. A capture process is considered whereby a free conduction-band electron is captured into the ground conduction-band state of a quantum dot by multiphonon-assisted tunneling through the trap. As an example calculation, transition rates for a 5 nm radius In<sub>0.5</sub>Ga<sub>0.5</sub>As/GaAs quantum dot coupled to the defect M1 are calculated as a function of separation between the quantum dot and the deep level. For separations less than * roughly-equal *10 nm these rates are found to be in excess of 10<sup>10</sup> s<sup>-1</sup> at 4.2 K. The result suggests that the presence of point defects may serve to enhance the luminescence efficiency of quantum-dot material. The physical situation described in this paper could only arise if the spatial distribution of defects were strongly correlated with that of the quantum-dot structures, e.g., through formation of interface states or point defects as a consequence of the growth process. With this caveat, the proposed mechanism may possibly explain the failure to observe a significant phonon bottleneck effect in recent work on In<sub>1-x</sub>Ga<sub>x</sub>As quantum-dot structures [e.g., Appl. Phys. Lett. 64, 2815 (1994)].</s0></fC01><fC02 i1="01" i2="3"><s0>001B70A50</s0></fC02><fC02 i1="02" i2="3"><s0>001B70A55</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C20D</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude théorique</s0></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Theoretical study</s0></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7150</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7155</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7320D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Point quantique</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Quantum dots</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Hétérostructure</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Heterostructures</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Dépendance température</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Temperature dependence</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Domaine température 0000-0013 K</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Temperature range 0000-0013 K</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Etat interface</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Interface states</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Défaut ponctuel</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Point defects</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Structure électronique</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Electronic structure</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Processus n phonons</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Multi-phonon processes</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Processus Umklapp</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Umklapp processes</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Temps relaxation</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Relaxation time</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Luminescence</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Luminescence</s0></fC03><fN21><s1>213</s1></fN21><fN47 i1="01" i2="1"><s0>9513M0743</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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